Innovation Kyoto 2016 Investment Limited Partnership ("KYOTO-iCAP No.1 Fund"), with Kyoto University Innovation Capital Corporation ("Kyoto iCAP") (Head office: Sakyo-ku, Kyoto; President: Koji Murota) as general partner, has made an investment in FLOSFIA Co. ("FLOSFIA") (Head office: Nishikyo-ku, Kyoto; President: Toshimi Hitora), a venture company that utilizes research results from Kyoto University.

Ltd. to make an investment in FLOSFIA, Inc.
FLOSFIA's revolutionary manufacturing method MISTEPITAXY does not use vacuum equipment®FLOSFIA is a Kyoto University venture that develops and manufactures power semiconductor devices using α-Ga₂O₃ (α-type gallium oxide) by the α-Ga₂O₃ method. α-Ga₂O₃ is a revolutionary power semiconductor material discovered by Professor Shizuo Fujita of Kyoto University, and is expected to significantly reduce power conversion losses while greatly reducing the overall cost of power conversion circuits. FLOSFIA was the first in the world to research and develop α-Ga₂O₃ semiconductors, and has achieved groundbreaking results, including the successful demonstration of a diode (SBD), the world's smallest characteristic on-resistance, and high-speed switching. We have also discovered a new p-type semiconductor, iridium oxide (α-Ir₂O₃), and succeeded in establishing the basic technology for normally-off transistors (FETs).

In the global movement toward energy conservation, the market for power devices that control the power of devices is expected to grow steadily. α-Ga₂O₃ is expected to be mass-produced as a trump card for energy conservation in the fields of industry, automobiles, electrical equipment, and new energy. Kyoto iCAP, together with the following venture capitalists and operating companies, has agreed to a third-party allocation of new shares totaling 750 million yen, of which we have invested 100 million yen, in the expectation that FLOSFIA will establish a production line through this investment and become the first in the world to mass produce α-Ga₂O₃ semiconductors. The Company invested ¥100 million of the total amount.

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(*) Underwritten by funds managed by each company

Miyako Capital Corporation (*)	(Headquarters: Kyoto, Japan; Representative Director: Satoshi Yamaguchi)
Environmental Energy Investment Co.	(Headquarters: Shinagawa-ku, Tokyo; Representative Director: Shuichiro Kawamura)
The University of Tokyo Edge Capital Corporation (*)	(Head office: Bunkyo-ku, Tokyo; President: Tomotaka Goji)
Nissay Capital Corporation (*)	(Head office: Chiyoda-ku, Tokyo; Representative Director: Eiji Arima)
Yaskawa Electric Corporation	(Head office: Kitakyushu City, Fukuoka Prefecture; President: Hiroshi Ogasawara)
Kyoto University Innovation Capital Corporation*.	(Headquarters: Kyoto, Japan; Representative Director: Koji Murota)
Future Venture Capital Corporation (*)	(Headquarters: Kyoto, Japan; President: Naoto Matsumoto)

 

Overview of FLOSFIA Corporation

Establishment	March 31, 2011
Business	Development and fabrication of α-Ga₂O₃ power semiconductor devices by the MISTEPITAXY® method
Head Office Location	Nishikyo-ku, Kyoto City, Kyoto Prefecture
President & CEO	Toshimi Jinra