Innovation Kyoto 2016 Investment Limited Partnership ("KYOTO-icap No.1 Fund"), with Kyoto University Innovation Capital Corporation ("Kyoto iCAP") (Head office: Sakyo-ku, Kyoto; Representative Director: Ko Kusumi) as general partner, has made an investment in FLOSFIA Co. ("FLOSFIA") (Head office: Nishikyo-ku, Kyoto; President: Toshimi Hitora), a venture company that utilizes research results from Kyoto University.

Outline of this investment
FLOSFIA is a Kyoto University venture that develops and manufactures power semiconductors using gallium α-oxide by the MIST EPITAXY® process, a revolutionary manufacturing method that does not use vacuum equipment. FLOSFIA has pioneered the research and development of α-gallium oxide power semiconductors and is on the verge of mass production and sales.

In the global movement toward energy conservation, alpha-gallium oxide power semiconductors are expected to make a significant contribution to energy conservation in the fields of industry, automobiles, electrical equipment, and new energy. This is the second investment in FLOSFIA, following a 100 million yen investment in 2017. This is the second investment in FLOSFIA, following a 100 million yen investment in 2017.

Overview of FLOSFIA Corporation

Establishment	March 31, 2011
Business	Development and production of alpha gallium oxide power semiconductors by MIST EPITAXY® method
Head Office Location	Nishikyo-ku, Kyoto
President & CEO	Toshimi Jinra